CAMBRIDGE, England, October 09, 2023--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to ...
The lateral structure is currently the most widely used of the various GaN transistor structures. High-electron–mobility transistors (HEMTs) made of gallium nitride are lateral devices that use a ...
onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...
Collaboration expands onsemi’s power portfolio to include high-performance 650V lateral GaN solutions for AI data centers, automotive, aerospace, and other critical markets onsemi expands its ...
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