New York, United States , June 01, 2023 (GLOBE NEWSWIRE) -- The Global High Electron Mobility Transistor (HEMT) Market Size is to grow from USD 7.51 billion in 2022 to USD 16.82 billion by 2032, at a ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...
A technical paper titled “A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications” was published by researchers at Wright-Patterson AFB, Teledyne Scientific, HRL Laboratories, BAE ...
Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...
A new technical paper titled “Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT” was published by researchers at University of Michigan. “We can make our ferroelectric HEMT reconfigurable ...
What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...
(Nanowerk News) Scientists at the Fraunhofer Institute for Applied Solid State Physics IAF have succeeded in developing a novel type of transistor with extremely high cut-off frequencies: metal oxide ...
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