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Abstract: This study explores the total-ionizing-dose (TID) and displacement damage (DD) effects in trench silicon carbide (SiC) power MOSFETs. The effects of X-ray irradiation reveal significant ...
Abstract: In this work, a novel ferroelectric FET (FeFET)-based universal content addressable memory (UCAM) is proposed and experimentally demonstrated for the first time. By utilizing the ...
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