World’s First Sub 1nm Chip Fits 100 Billion Transistors Into Fingernail Size

IBM has introduced what it describes as the world’s first chip technology below 1 nanometer, designed to fit nearly 100 ...
Compound Semiconductor

Gallium oxide MOSFETs: Why interfaces matter

Developers of gallium oxide power devices should draw on lessons learnt from the pioneers of compound semiconductor MOSFETs.
IEEE

Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric

Abstract: Pentacene organic thin-film transistors (OTFTs) with HfLaON high-k gate dielectric have been fabricated using various gate-electrode materials, including different metals (Al, Au, Cu, Cr, Ti ...
IEEE

Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress

Abstract: This study aimed to evaluate the reliability of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under extremely high gate voltage stress. The research ...
Interesting Engineering

South Korean device cuts required components by 75%, boosts data processing speed by 4x

Researchers have developed a transistor technology that enables a single semiconductor device to perform multiple circuit functions simultaneously. Developed by the Pohang University of Science and ...
techxplore

Ultra-thin MoS₂ computer packs 1,400 transistors onto one chip

The rapid advancement and diffusion of artificial intelligence (AI) systems, such as the machine learning models underpinning the functioning of ChatGPT, Gemini and similar platforms, have posed new ...